Experimental evidence for nonlucky electron model effect in 0.15-μm NMOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 11, 2002, Pages 1876-1881

  Lee, Sang Gi ^a   Hwang, Jeong Mo ^a   Lee, Hi Deok ^b  

^a Technology Center   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

0.15 m MOSFET; Channel hot carrier (CHC); Drain avalanche hot carrier (DAHC); Hot carrier; Lucky electron model (LEM)

Indexed keywords

ELECTRONS; HOT CARRIERS; STRESS ANALYSIS; THRESHOLD VOLTAGE;

CHANNEL HOT-CARRIERS;

MOSFET DEVICES;

EID: 0036866055     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.804714     Document Type: Article

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