Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 7 A, 2003, Pages

  Yagi, Hideki ^a   Sano, Takuya ^a   Ohira, Kazuya ^a   Maruyama, Takeo ^a,b   Haque, Anisul ^a,b   Arai, Shigehisa ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

CH4 H2 RIE; GaInAsP InP; OMVPE regrowth; Quantum wire laser; Strain compensated quantum well structure

Indexed keywords

CONTINUOUS WAVE LASERS; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS;

QUANTUM WIRE LASERS;

QUANTUM ELECTRONICS;

EID: 0041363309     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l748     Document Type: Article

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