Energy-band structures of GaInAsP/InP vertically stacked multiple quantum-wire lasers with strain-compensating barriers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 433-436

  Haque, Anisul ^a   Yagi, Hideki ^a   Sano, Takuya ^a   Maruyama, Takeo ^a   Arai, Shigehisa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CRYSTALLOGRAPHY; ELECTRON BEAM LITHOGRAPHY; GREEN'S FUNCTION; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; CAPACITIVE SENSORS; ELECTRON BEAMS; ETCHING; INDIUM; INDIUM PHOSPHIDE; LITHOGRAPHY; NANOWIRES; QUANTUM THEORY; SPONTANEOUS EMISSION; SUBSTRATES;

GALLIUM INDIUM ARSENIUM PHOSPHIDE; MULTIPLE QUANTUM-WIRE LASER; STRAIN-COMPENSATING BARRIER; STRAINED QUANTUM WIRE;

SEMICONDUCTOR LASERS; WIRE;

CONDUCTING MATERIALS; FITTING PARAMETERS; NON-UNIFORM STRAIN; QUANTUM WIRE LASERS; QUANTUM-WIRE STRUCTURES; STRAIN COMPENSATION; STRAIN-COMPENSATED; VERTICAL STACKS;

EID: 0037810790     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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