Electrical transport properties of NiSi2 layers synthesized by metal vapor vacuum-arc ion implantation: Temperature dependence and two-band model

Applied Physics Letters

Volumn 80, Issue 2, 2002, Pages 249-251

  Zhang, X W ^a   Wong, S P ^a   Cheung, W Y ^a   Zhang, F ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSPORT PROPERTIES; HALL EFFECT MEASUREMENT; METAL VAPOR; NICKEL DISILICIDE; NICKEL ION IMPLANTATION; PREPARATION CONDITIONS; SHEET RESISTIVITY; SILICON SUBSTRATES; TEMPERATURE DEPENDENCE; TWO-BAND MODEL; VALLEY FEATURES;

HALL EFFECT; HALL MOBILITY; ION IMPLANTATION; ION SOURCES; NICKEL COMPOUNDS; SHEET METAL; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES; VACUUM; VAPORS;

ELECTRIC PROPERTIES;

EID: 79956051327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1432762     Document Type: Article

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