Growth and characterization of erbium silicides synthesized by metal vapor vacuum arc ion implantation

Materials Research Society Symposium - Proceedings

Volumn 647, Issue , 2001, Pages

  Zhang, X W ^a   Cheung, W Y ^a   Wong, S P ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMS; CHARACTERIZATION; GROWTH (MATERIALS); ION IMPLANTATION; MORPHOLOGY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SURFACE STRUCTURE; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

ERBIUM SILICIDE; METAL VAPOR VACUUM ARC ION IMPLANTATION;

ERBIUM COMPOUNDS;

EID: 0035174708     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)