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Thin Solid Films

Volumn 275, Issue 1-2, 1996, Pages 87-90

Erbium suicide films on (100) silicon, grown in high vacuum. Fabrication and properties

(6) Kaltsas, G a Travlos, A b Salamouras, N b Nassiopoulos, A G a Revva, P a Traverse, A c

a INSTITUTE OF MICROELECTRONICS (Greece)

b INSTITUTE OF MATERIALS SCIENCE (Greece)

c 91405 Orsay Campus (France)

Author keywords

Growth mechanism; Silicon; X ray diffraction

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; FILM GROWTH; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; VACUUM APPLICATIONS; X RAY DIFFRACTION;

CRYSTALLINITY; ERBIUM SILICIDE FILM; GROWTH MECHANISM; X RAY DIFFRACTION PATTERN;

METALLIC FILMS;

EID: 0030124917 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(95)07026-5 Document Type: Article

Times cited : (21)

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