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Xu X, Yang J, Guha S. Hydrogen dilution effects on a-Si:H and a-SiGe:H materials properties and solar cell performance. J Non-Cryst Solids. 198-200:1996;60-64 Discusses the effect of heavy hydrogen dilution on the properties of a-Si and a-SiGe alloy materials and cells.
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PVSEC, Miyazaki, Japan, Correlates the degradation behavior of hydrogen-diluted a-Si alloy films and solar cells
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E.A. Schiff, M. Hack, A. Madan, M. Powell, Matsuda A. Pittsburgh: Materials Research Society
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2 dilution on the stability of a-Si:H based solar cells. Schiff EA, Hack M, Madan A, Powell M, Matsuda A. Amorphous Silicon Technology -1994, Materials Research Society Symposium Proceedings. 336:1994;669-674 Materials Research Society, Pittsburgh.
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Williamson DL. Nanostructure of a-Si:H and related materials by small-angle x-ray scattering. Hack M, Schiff EA, Madan A, Powell M, Matsuda A. Amorphous Silicon Technology-1995, Materials Research Society Symposium Proceedings. 377:1995;251-262 Materials Research Society, Pittsburgh.
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Mahan, A.H.1
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M. Hack, E.A. Schiff, S. Wagner, R. Schropp, Matsuda A. Materials Research Society, Pittsburgh, Demonstrates the preparation of a wide bandgap a-Si alloy of high quality using chemical annealing at low substrates temperature (200°C)
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Yoshino K, Futako W, Wasai Y, Shimizu I. Wide-gap a-Si:H fabricated by controlling voids. Hack M, Schiff EA, Wagner S, Schropp R, Matsuda A. Amorphous Silicon Technology-1996, Materials Research Society Symposium Proceedings. 420:1996;335-340 Materials Research Society, Pittsburgh, Demonstrates the preparation of a wide bandgap a-Si alloy of high quality using chemical annealing at low substrates temperature (200°C).
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Yoshino, K.1
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18
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M. Hack, E.A. Schiff, S. Wagner, Schropp R. Materials Research Society, Pittsburgh, Describes a chemical engineering technique at high substrate temperature (200°C) to obtain a high-quality, low-bandgap a-Si alloy
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Futako W, Shimizu I, Matsuda A. Modulation of growing surface with atomic hydrogen and excited argon to fabricate narrow gap a-Si:H. Hack M, Schiff EA, Wagner S, Schropp R. Amorphous Silicon Technology-1996, Materials Research Society Symposium Proceedings. 420:1996;431-436 Materials Research Society, Pittsburgh, Describes a chemical engineering technique at high substrate temperature (200°C) to obtain a high-quality, low-bandgap a-Si alloy.
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Dalal, V.1
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20
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0030412966
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Modified triode plasma configuration allowing precise control of ion-energy for preparing high mobility a-Si:H
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M. Hack, E.A. Schiff, S. Wagner, R. Schropp, Matsuda A. Materials Research Society, Pittsburgh, Discusses the optimum conditions necessary to obtain a high quality material using a triode cell configuration
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Ganguly G, Ikeda T, Sakata I, Matsuda A, Kato K, Iizuka S, Sato N. Modified triode plasma configuration allowing precise control of ion-energy for preparing high mobility a-Si:H. Hack M, Schiff EA, Wagner S, Schropp R, Matsuda A. Amorphous Silicon Technology-1996, Materials Research Society Symposium Proceedings. 420:1996;347-352 Materials Research Society, Pittsburgh, Discusses the optimum conditions necessary to obtain a high quality material using a triode cell configuration.
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21
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Chen CC, Zhong F, Cohen JD. Effects of light induced degradation on the distribution of deep defects in hydrogenated amorphous silicon-germanium alloys. Hack M, Schiff EA, Wagner S, Schropp R, Matsuda A. Amorphous Silicon Technology-1996, Materials Research Society Symposium Proceeding. 420:1996;581-586 Materials Research Society, Pittsburgh.
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Discusses the need for special surface treatment to obtain high efficiency cells using hot-wire deposition
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Mahan, A.H.1
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PVSEC, Miyazaki, Japan, Discusses conditions for obtaining high quality material at high deposition rate using VHF
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Shah, A.1
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PVSEC, Miyazaki, Japan, Demonstrates improved stability in triple-junction cells where the middle and the bottom cells use a microwave-deposited a-SiGe alloy
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