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Volumn 420, Issue , 1996, Pages 347-352

Modified triode plasma configuration allowing precise control of ion-energy for preparing high mobility a-Si:H

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CARRIER CONCENTRATION; CONDUCTIVE MATERIALS; ELECTROCHEMICAL ELECTRODES; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ION BOMBARDMENT; SEMICONDUCTOR PLASMAS; SILANES;

EID: 0030412966     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-347     Document Type: Conference Paper
Times cited : (17)

References (5)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.