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Volumn 420, Issue , 1996, Pages 347-352
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Modified triode plasma configuration allowing precise control of ion-energy for preparing high mobility a-Si:H
a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS FILMS;
CARRIER CONCENTRATION;
CONDUCTIVE MATERIALS;
ELECTROCHEMICAL ELECTRODES;
ELECTRON ENERGY LEVELS;
ELECTRON TRANSPORT PROPERTIES;
ION BOMBARDMENT;
SEMICONDUCTOR PLASMAS;
SILANES;
ION ENERGY CONTROL;
LANGMUIR PROBE MEASUREMENTS;
SILANE PLASMA;
SUBSTRATE BIASING;
TRIODE PLASMA CONFIGURATION;
AMORPHOUS SILICON;
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EID: 0030412966
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-420-347 Document Type: Conference Paper |
Times cited : (17)
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References (5)
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