Modified triode plasma configuration allowing precise control of ion-energy for preparing high mobility a-Si:H

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 347-352

  Ganguly, G ^a   Ikeda, T ^a   Sakata, I ^a   Matsuda, A ^a   Kato, K ^a   Iizuka, S ^a   Sato, N ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CARRIER CONCENTRATION; CONDUCTIVE MATERIALS; ELECTROCHEMICAL ELECTRODES; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ION BOMBARDMENT; SEMICONDUCTOR PLASMAS; SILANES;

ION ENERGY CONTROL; LANGMUIR PROBE MEASUREMENTS; SILANE PLASMA; SUBSTRATE BIASING; TRIODE PLASMA CONFIGURATION;

AMORPHOUS SILICON;

EID: 0030412966     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-347     Document Type: Conference Paper

References (5)