Material basis of highly stable a-Si:H solar cells

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 33-38

  Rech, B ^a   Wieder, S ^a   Siebke, F ^a   Beneking, C ^a   Wagner, H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BAND STRUCTURE; CHARACTERIZATION; CURRENT DENSITY; DEGRADATION; DEPOSITION; HYDROGENATION; INTERFACES (MATERIALS); MICROSTRUCTURE; PHOTOCONDUCTIVITY; SEMICONDUCTOR DEVICE MANUFACTURE; STABILITY;

DEFECT DENSITY; HYDROGEN DILUTION; HYDROGENATED AMORPHOUS SILICON SOLAR CELLS; LIGHT SOAKING; OPTICAL BANDGAP; SHORT CIRCUIT CURRENT DENSITIES;

SILICON SOLAR CELLS;

EID: 0030413946     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-33     Document Type: Conference Paper

References (11)