Wide-gap a-Si:H fabricated by controlling voids

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 335-340

  Yoshino, K ^a   Futako, W ^a   Wasai, Y ^a   Shimizu, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL DEFECTS; DEPOSITION; ENERGY GAP; FILM PREPARATION; HYDROGENATION; OPTICAL INSTRUMENTS; STABILITY;

CHEMICAL ANNEALING; ELLIPSOMETERS; LIGHT SOAKING; VOIDS; WIDE GAP FILMS;

AMORPHOUS FILMS;

EID: 0030401084     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-335     Document Type: Conference Paper

References (5)