Electrical properties of the TiSi2-Si transition region in contacts: The influence of an interposed layer of Nb

Journal of Applied Physics

Volumn 90, Issue 5, 2001, Pages 2380-2388

  Aberg J ^a,b   Persson, S ^a   Hellberg, P E ^a   Zhang, S L ^a,e   Smith, U ^b,c   Ericson, F ^c   Engstrom M ^c   Kaplan, W ^d  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ERICSSON RESEARCH   (Sweden)

^c UPPSALA UNIVERSITY   (Sweden)

^d ACREO AB   (Sweden)

^e INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038844126     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1384486     Document Type: Article

References (40)

1. F. M. d'Heurle, J. Electron. Mater. 27, 1138 (1998).
2. R. W. Mann, L. A. Clevenger, P. D. Agnello, and F. R. White, IBM J. Res. Dev. 39, 403 (1995).
3. R. A. Roy, C. Cabral, Jr., and C. Lavoie, in Advanced Interconnects and Contacts, edited by D. C. Edelstein, T. Kikkawa, M. C. Öztürk, K.-N. Tu, and E. J. Weitzman (Materials Research Society, Warrendale, PA, 1999), pp. 35-45.
4. F. M. d'Heurle, P. Gas, I. Engström, S. Nygren, M. Östling, and C. S. Petersson, IBM Research Report No. RC 11151, No. 50067, 1985 (unpublished).
5. 2).
6. J. B. Lasky, J. S. Nakos, O. J. Cain, and P. J. Geiss, IEEE Trans. Electron Devices ED-38, 262 (1991).
7. J. F. DiGregorio and R. N. Wall, IEEE Trans. Electron Devices ED-47, 313 (2000).
8. F. M. d'Heurle, J. Mater. Res. 3, 167 (1988).
9. A. Mouroux, B. Reynard, and S.-L. Zhang, in Advanced Metallisation and Interconnect Systems for VLSI Application in 1997, San Diego, CA, 1997, edited by R. Cheung, J. Klein, K. Tsubouchi, M. Murakami, and N. Kobayashi (Material Research Society, Warrendale, PA, 1998), pp. 605-609.
10. C. Cabral, Jr., L. A. Clevenger, J. M. E. Harper, F. M. d'Heurle, R. A. Roy, C. Lavoie, G. L. Miles, R. W. Mann, and J. S. Nakos, Appl. Phys. Lett. 71, 3531 (1997).
11. R. W. Mann, G. L. Miles, T. A. Knotts, D. W. Rakowski, L. A. Clevenger, J. M. E. Harper, F. M. d'Heurle, and C. Cabral, Jr., Appl. Phys. Lett. 67, 3729 (1995).
12. A. Mouroux, S.-L. Zhang, W. Kaplan, S. Nygren, M. Östling, and C. S. Petersson, Appl. Phys. Lett. 69, 975 (1996).
13. A. Mouroux, S.-L. Zhang, and C. S. Petersson, Phys. Rev. B 56, 10614 (1997).
14. C. Cabral, Jr., L. A. Clevenger, J. M. E. Harper, F. M. d'Heurle, R. A. Roy, K. L. Saenger, G. L. Miles, and R. W. Mann, J. Mater. Res. 12, 304 (1997).
15. S.-L. Zhang and F. M. d'Heurle, Appl. Phys. Lett. 76, 1831 (2000).
16. A. Mouroux, PhD thesis, Kungliga Tekniska Högskolan, Stockholm, 1999.
17. J. M. E. Harper, C. Cabral, Jr., and C. Lavoie, Annu. Rev. Mater. Sci. 30, 523 (2000).
18. S. J. Proctor, L. W. Linholm, and J. A. Mazer, IEEE Trans. Electron Devices ED-30, 1535 (1983).
19. W. M. Loh, S. E. Swirhun, T. A. Schreyer, R. M. Swanson, and K. C. Saraswat, IEEE Trans. Electron Devices ED-34, 512 (1987).
20. R. L. Gillenwater, M. J. Hafich, and G. Y. Robinson, IEEE Trans. Electron Devices ED-34, 537 (1987).
21. S.-L. Zhang, W. Kaplan, M. Östling, H. Norström, and A. Lindberg, Mater. Res. Soc. Symp. Proc. 260, 233 (1992).
22. W. Kaplan, S.-L. Zhang, H. Norström, M. Östling, and A. Lindberg, Microelectron. Eng. 19, 661 (1992).
23. L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 9, 344 (1985).
24. J. P. Benedict, S. J. Klepeis, W. G. Vandygrift, and R. Anderson, EMSA Bulletin 19:2, 74 (1989).
25. H. Jeon, C. A. Sukow, J. W. Honeycutt, G. A. Rozgonyi, and R. J. Nemanich, J. Appl. Phys. 71, 4269 (1992).
26. A. Mouroux, T. Epicier, S.-L. Zhang, and P. Pinard, Phys. Rev. B 60, 9165 (1999).
27. A. Mouroux, M. Roux, S.-L. Zhang, F. M. d'Heurle, C. Cabral, Jr., C. Lavoie, and J. M. E. Harper, J. Appl. Phys. 86, 2323 (1999).
28. F. Bonoli, M. Iannuzzi, L. Miglio, and V. Meregalli, Appl. Phys. Lett. 73, 1964 (1998).
29. R. Beyers and R. Sinclair, J. Appl. Phys. 57, 5240 (1985).
30. E. G. Colgan, C. Cabral, Jr., and D. E. Kotecki, J. Appl. Phys. 77, 614 (1995).
31. K. W. J. Findlay, W. J. C. Alexander, and A. J. Walton, in Proceedings of the IEEE 1989 International Conference on Microelectronic Test Structures (IEEE, New York, 1989), Vol. 2, pp. 133-138.
32. M. Östling and C. Zaring, in Properties of Metal Silicides, edited by K. Maex and M. van Rossum (Inspec, the Institute of Electrical Engineering, London, 1995), p. 20.
33. S. Persson, S.-L. Zhang, and U. Smith (unpublished).
34. A. Lindberg, M. Östling, H. Norström, and U. Wennström, in Proceedings of the Seventeenth European Solid State Device Research Conference, Bologna, Italy, 1987, pp. 191-195.
35. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 304.
36. M. M. Mandurah, K. C. Saraswat, C. R. Helms, and T. I. Kamins, J. Appl. Phys. 51, 5755 (1980).
37. K. Varahramyan and E. J. Verret, Solid-State Electron. 39, 1601 (1996).
38. P.-E. Hellberg, A. Gagnor, S.-L. Zhang, and C. S. Petersson, J. Electrochem. Soc. 144, 3968 (1997), and references therein.
39. J. Derrien, in Properties of Metal Silicides, edited by K. Maex and M. van Rossum (Inspec, the Institute of Electrical Engineering, London, 1995), p. 165.
40. S. Q. Wang and J. W. Mayer, J. Appl. Phys. 67, 2932 (1990).