Microscopic evidence of C40 and C54 in (Ti, Ta)Si2: Template mechanism

Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 12, 1999, Pages 9165-9168

  Mouroux, A ^a   Epicier, T ^a,b   Zhang, S L ^a   Pinard, P ^a,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITÉ DE LYON   (France)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001004514     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.9165     Document Type: Article

References (17)

1. F. M. d’Heurle, I. Engström, S. Nygren, and C. S. Petersson, P. Gas, M. Östling, IBM, Report No. 50067, 1985 (unpublished).
2. R. Beyers and R. Sinclair, J. Appl. Phys., 57, 5240 (1985).
3. R. W. Mann, G. L. Miles, T. A. Knotts, D. W. Rakowski, L. A. Clevenger, J. M. E. Harper, F. M. d’Heurle, and C. Cabral, Jr., Appl. Phys. Lett., 67, 3729 (1995).
4. A. Mouroux, S.-L. Zhang, W. Kaplan, S. Nygren, M. Östling, and C. S. Petersson, Appl. Phys. Lett., 69, 975 (1996).
5. C. Cabral, Jr., L. A. Clevenger, J. M. E. Harper, F. M. d’Heurle, R. A. Roy, K. L. Saenger, G. L. Miles, and R. W. Mann, J. Mater. Res., 12, 304 (1997).
6. A. Mouroux, S.-L. Zhang, and C. S. Petersson, Phys. Rev. B, 56, 10 614 (1997).
7. C. Cabral, Jr., L. A. Clevenger, J. M. E. Harper, F. M. d’Heurle, R. A. Roy, C. Lavoie, G. L. Miles, R. W. Mann, and J. S. Nakos, Appl. Phys. Lett., 71, 3531 (1997).
8. A. Mouroux, B. Reynard, and S.-L. Zhang, in Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, edited by R. Cheung, J. Klein, K. Tsubouchi, M. Murakami, and N. Kobyashi (Materials Research Society, Warendale, PA, 1998), pp. 605–609.
9. H. J. Goldschmidt, Interstitial Alloys (Butterworths, London, 1967), pp. 323–307
10. O. Thomas, S. Delage, and F. M. d’Heurle, Extended Abstracts, (Electrochemical Society, Pennington, NJ, 1988), Vol. 88-1, p. 209.
11. X.-H. Li, J. R. A. Carlsson, S. F. Gong, and H. T. G. Hentzell, J. Appl. Phys., 72, 514 (1992).
12. S.-L. Zhang, F. M. d’Heurle, C. Lavoie, C. Cabral, Jr., and J. M. E. Harper, Appl. Phys. Lett., 73, 312 (1998).
13. F. Bonoli, M. Iannuzzi, L. Miglio, and V. Meregalli, Appl. Phys. Lett., 73, 1964 (1998).
14. F. M. d’Heurle, in VLSI Science and Technology, edited by C. Dell’Oca and W. M. Bullis (The Electrochemical Society, Pennington, NJ, 1982), pp. 194–212.
15. H. Kudielka and H. Nowotny, Monatsch. Chem., 87/3, 31 (1956).
16. P. Gas, J. Tardy, F. K. LeGoues, and F. M. d’Heurle, J. Appl. Phys., 61, 2203 (1987).
17. A. Mouroux, M. Roux, J. M. E. Harper, F. M. d’Heurle, C. Cabral, Jr., and C. Lavoie, S.-L. Zhang (unpublished).