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Volumn 744, Issue , 2002, Pages 9-14

Lateral epitaxial overgrowth of InAs on (100) GaAs substrates

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SILICA; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 0038826670     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-744-m1.4     Document Type: Conference Paper
Times cited : (1)

References (7)
  • 2
    • 0032293905 scopus 로고    scopus 로고
    • G. Wagner, Cryst. Res. Tech. 33 (5), 681 (1998), and references therein.
    • (1998) Cryst. Res. Tech. , vol.33 , Issue.5 , pp. 681
    • Wagner, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.