Misfit strain relaxation by dislocations in InAs Islands and layers epitaxially grown on (001)GaAs substrates by MOVPE

Crystal Research and Technology

Volumn 33, Issue 5, 1998, Pages 681-705

  Wagner, G ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPY; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; NUCLEATION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN;

INDIUM ARSENIDE; LOMER DISLOCATIONS; MISFIT STRAIN RELAXATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032293905     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-4079(1998)33:5<681::aid-crat681>3.0.co;2-p     Document Type: Article

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