Structural investigations of MBE-grown InAs layers on GaAs

Journal of the Korean Physical Society

Volumn 40, Issue 1, 2002, Pages 119-122

  Kim, Sung Man ^a   Lee, Sang Heon ^a   Kim, Howoon ^a   Shin, Jang Kyoo ^a   Leem, Jae Young ^b   Kim, Jong Su ^c   Kim, Jin Soo ^d  

^a Kyungpook National University   (South Korea)

^b Inje University   (South Korea)

^c Yeungnam University   (South Korea)

^d Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036002419     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (12)

1. R.S. Popovic, J.A. Flanagan, P.A. Besse, Sensors and Actuator A 56, 39 (1996).
2. M.J. Yang, F.C. Wang, C.H. Yang, B.R. Bennett and T.Q. Do, Appl. Phys. Lett. 69, 85 (1996).
3. H.M. Wang, Y.P. Zeng, T.W. Fan, H.W. Zhou, D. Pan, J.R. Dong and M.Y. Kong, J. Crystal Growth 179, 658 (1997).
4. M. Yamamoto, T. Iwabuchi, T. Ito, T. Yoshida, T. Isoya and I. Shibasaki, J. Crystal Growth 175, 191 (1997).
5. S.E. Hooper, D.I. Westwood, D.A. Woolf and R.H. Williams, J. Crystal Growth 127, 918 (1993).
6. Y.G. Chai, R. Chow and C.E.C. Wood, Appl. Phys. Lett. 39, 800 (1981).
7. Z. Hongwei, Z. Yiping, W. Hongmei, D. Jianrong, Z. Zhanping, P. Liang and K. Meiying, J. Crystal Growth 191, 361 (1998).
8. T. Iwabuchi, T. Ito, M. Yamamoto, K. Sako, Y. Kanayama, K. Nagase, T. Yochida, F. Ichimori and I. Shibasaki, J. Crystal Growth 150, 1320 (1995).
9. S. Kalem, J. Appl. Phys. 66, 3097 (1989).
10. S.P. Watkins, C.A. Tran, R. Ares and G. Soerensen, Appl. Phys. Lett. 66, 882 (1995).
11. Chin-An Chang, C.M. Serrano, L.L. Chang and L. Esaki, J. Vac. Sci. Technol. 37, 538 (1980).
12. D.G. Liu, J.C. Fan, C.P. Lee, K.H. Chang and D.C. Liou, J. Appl. Phys. 73, 608 (1993).