Dislocation arrangement in a thick LEO GaN film on sapphire

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  Dunn, Kathleen A ^a   Babcock, Susan E ^a   Stone, Donald S ^a   Matyi, Richard J ^a   Zhang, Ling ^a   Kuech, Thomas F ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; THERMAL EXPANSION; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

DIFFRACTION CONTRAST; DISLOCATION DENSITIES; THERMAL EXPANSION COEFFICIENTS (TEC);

GALLIUM NITRIDE;

EID: 0005986832     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300004130     Document Type: Conference Paper

References (7)

1. T. S. Zheleva, O.-H. Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 71, 2472 (1997).
2. D. Kapolnek, S. Keller, R. Vetury, R.D. Underwood, P. Kozodoy, S. P. DenBaars, and U.K. Mishra, Appl. Phys. Lett. 71, 1204 (1997).
3. R. Zhang, L. Zhang, D. M. Hansen, M. P. Boleslawski, K. L. Chen, D. Q. Lu, B. Shen, Y.D. Zheng and T. F. Kuech, MRS Internet J. Nitride Semicond. Res. 4: U473-U478, Suppl. 1 (1999).
4. B.K. Tanner and D. K. Bowen, High Resolution X-ray Diffractometry & Topography, Taylor & Francis, Bristol, PA 1998.
5. P. Fini, L. Zhao, B. Moran, M. Hansen, H. Marchand, J. P. Ibbetson, S. P. DenBaars, U. K. Mishra, and J. S. Speck, Appl. Phys. Lett. 75(12), 1706 (1999).
6. H. Marchand, X.H. Wu, J. P. Ibbetson, P.T. Fini, P. Kozodoy, S. Keller, J.S. Speck, S. P. DenBaars, U.K. Mishra, Appl. Phys. Lett. 73(6), 747 (1998).
7. Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, J. Park, P.A. Grudowski, C.J. Eiting, R.D. DupuisMRS Internet J. Nitride Semicond. Res. 4S1, G4.6 (1999).