High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 491-494

  Tamura, Munehisa ^a   Yamanaka, Takayuki ^a   Fukano, Hideki ^a   Akage, Yuichi ^a   Kondo, Yasuhiro ^a   Saitoh, Tadashi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC LINES; ELECTRODES; MICROWAVE MEASUREMENT; RUTHENIUM; SEMICONDUCTING INDIUM COMPOUNDS; WAVEGUIDES; ZINC; BANDWIDTH; CAPACITANCE; ETCHING; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM; INDIUM PHOSPHIDE; LIGHT MODULATION; MICROWAVE DEVICES; MICROWAVES; MODULATION; MODULATORS; POLYIMIDES;

ELECTROABSORPTION MODULATORS; INTERDIFFUSION-FREE BURYING TECHNOLOGY; RUTHENIUM-DOPED SEMI-INSULATING-INDIUM PHOSPHIDE; ZINC DIFFUSION;

MODULATORS; ELECTROABSORPTION MODULATORS;

ELECTRICAL BANDWIDTH; HIGH SPEED ELECTROABSORPTION MODULATOR; HIGH SPEED OPTICAL TECHNIQUES; LOSS MEASUREMENT; MICROWAVE CHARACTERISTICS; MODULATION CHARACTERISTICS; PARASITIC CAPACITANCE; RUTHENIUM DOPED;

EID: 0038825115     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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