Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 69-73

  Dadgar, A ^a   Stenzel, O ^a   Kohne L ^a   Naser A ^a   Strassburg M ^a   Stolz, W ^b   Bimberg, D ^a   Schumann, H ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

MOCVD; Semi insulating InP; Transition metal doping

Indexed keywords

DIFFUSION IN SOLIDS; HYDROGEN; IRON; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; RUTHENIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032477223     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00678-2     Document Type: Article

References (8)

1. S. Yamakoshi, in: G. Grossmann, L. Lebedo (Eds.), Semi-Insulating III-V Materials, Malmö, Sweden, Adam Hilger, Bristol, 1988, p. 213.
2. B. Clerjaud, J. Phys. C 18 (1985) 3615.
3. T. Wolf, T. Zinke, A. Krost, H. Schemer, H. Ullrich, D. Bimberg, J. Appl. Phys. 75 (1994) 3870.
4. M. Kuttler, A. Knecht, H. Kräutle, D. Bimberg, Mater. Res. Soc. Symp. Proc. 316 (1994) 179.
5. A. Näser, A. Dadgar, M. Kuttler, R. Heitz, D. Bimberg, J.Y. Hyeon, H. Schumann, Appl. Phys. Lett. 67 (1995) 479.
6. G. Bremond, A. Nouailhat, G. Guillot, Y. Toudic, B. Lambert, M. Gauneau, R. Coquille, B. Deveaud, Semiconductor Sci. Technol. 2 (1987) 772.
7. B. Cockayne, W.R. MacEwan, I.R. Harris, N.A. Smith, J. Mater. Sci. Lett. 4 (1985) 704.
8. A. Dadgar, L. Köhne, J.Y. Hyeon, T. Grundemann, O. Stenzel, M. Straßburg, M. Kutler, R. Heitz, D. Bimberg, H. Schumann, J. Crystal Growth 170 (1997) 173.