Ruthenium-doped semi-insulating InP-buried InGaAlAs/InAlAs multi-quantum-well modulators

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1171-1174

  Kondo, Susumu ^a   Noguchi, Yoshio ^a   Tsuzuki, Ken ^a   Yuda, Masahiro ^a   Oku, Satoshi ^a   Kondo, Yasuhiro ^a   Takeuchi, Hiroaki ^a  

^a NIIGATA UNIVERSITY OF INTERNATIONAL AND INFORMATION STUDIES   (Japan)

Author keywords

InAlAs; InGaAlAs; InP; Modulator; MQW; Ruthenium; Semi insulating

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTIVITY; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

MULTI-QUANTUM-WELL MODULATORS; SEMI-INSULATING LAYERS;

LIGHT MODULATORS;

EID: 0036478729     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1171     Document Type: Conference Paper

References (7)