InP-InGaAsP high-speed traveling-wave electroabsorption modulators with integrated termination resistors

IEEE Photonics Technology Letters

Volumn 14, Issue 7, 2002, Pages 923-925

  Irmscher, S ^a,b   Lewen R ^a,b   Eriksson, U ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Optillion AB   (Sweden)

Author keywords

Broad band modulation; Electroabsorption; Optical fiber communication; Traveling wave modulator

Indexed keywords

BANDWIDTH; MODULATORS; OPTIMIZATION; RESISTORS; SEMICONDUCTING INDIUM PHOSPHIDE;

TRAVELING-WAVE ELECTROABSORPTION MODULATORS (TWEAM);

OPTICAL FIBERS;

EID: 0036649646     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.1012386     Document Type: Article

References (9)

1. Polarization-insensitive travelling-wave electrode electroabsorption (TW-EA) modulator with bandwidth over 50 GHz and driving voltage less than 2 V
2. 25 GHz polarization-insensitive electroabsorption modulators with traveling-wave electrodes
3. 450 μm-long, traveling-wave Franz-Keldysh modulator with integrated termination resistors and >40 GHz bandwidth
4. High-saturation high-speed traveling-wave InGaAsP-InP electroabsorption modulator
5. Wide bandwidth of over 50 GHz travelling-wave electrode electroabsorption modulator integrated DFB lasers
6. EAM-integrated DFB laser modules with more than 40-GHz bandwidth
7. Influence of electrode width on high-speed performance of traveling-wave electro-absorption modulators
8. Microwave properties of ultrahigh-speed traveling-wave electroabsorption modulators for 1.55 μm
9. Ultrahigh-speed traveling-wave electroabsorption modulator Design and analysis