Ruthenium doped high power 1.48 μm SIPBH laser

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 203-206

  van Geelen, A ^a   Binsma, J J M ^a   van Dongen, T ^a   van Leerdam, A ^a   Dadger, A ^a   Bimberg, D ^a   Stenzel, O ^a   Schumann, H ^a  

^a Uniphase Netherlands BV   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATING MATERIALS; HETEROJUNCTIONS; HIGH POWER LASERS; IRON; RUTHENIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

SEMI-INSULATING PLANAR BURIED HETEROSTRUCTURE (SIPBH) LASERS;

SEMICONDUCTOR LASERS;

EID: 0032682891     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (18)