Comparison of dry etching techniques for InGaP, AlInP and AlGaP

Solid-State Electronics

Volumn 39, Issue 7, 1996, Pages 1109-1112

  Hong, J ^a   Lee, J W ^a   Santana, C J ^a   Abernathy, C R ^a   Larabers, E S ^a   Pearton, S J ^a   Hobson, W S ^a   Ren, F ^b  

^a University of Florida   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRON CYCLOTRON RESONANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACES;

ION DENSITY; MASS FLOW CONTROLLERS; METALLORGANIC MOLECULAR BEAM EPITAXY; OPTICAL EMISSION SPECTROSCOPY;

ETCHING;

EID: 0030193609     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00422-X     Document Type: Article

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