Silicon tunnel diodes formed by proximity rapid thermal diffusion

IEEE Electron Device Letters

Volumn 24, Issue 2, 2003, Pages 93-95

  Wang, Jinli ^a   Wheeler, Dane ^a   Yan, Yan ^a   Zhao, Jialin ^a   Howard, Scott ^a   Seabaugh, Alan ^a  

^a University of Notre Dame   (United States)

Author keywords

Negative differential resistance (NDR); Negative resistance; Rapid thermal diffusion; Spin on diffusant; Tunnel diode

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING SILICON; THERMAL DIFFUSION;

RAPID THERMAL DIFFUSION;

TUNNEL DIODES;

EID: 0038732571     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807706     Document Type: Article

References (12)

1. A. Seabaugh, B. Brar, T. Broekaert, F. Morris, G. Frazier, X. Deng, and T. Blake, "Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory," in IEEE IEDM Tech. Dig., 1998, pp. 429-432.
2. R. G. Swartz, "In perspective, the tunnel diode," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 1986, pp. 278-280.
3. M. W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P. R. Berger, C. Guedj, J. Kolodzey, A. C. Seabaugh, and R. Lake, "Current - voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing," IEEE Trans. Electron Devices, vol. 47, pp. 1707-1714, Sept. 2000.
4. M. W. Dashiell, J. Kolodzey, P. Crozat, F. Aniel, and J.-M. Lourtioz, "Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy," IEEE Electron Device Lett., vol. 23, pp. 357-359, June 2002.
5. S. L. Rommel, T. E. Dillon, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, and A. C. Seabaugh, "Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities," IEEE Electron Device Lett., vol. 20, pp. 329-331, July 1999.
6. P. E. Thompson, K. D. Hobart, M. E. Twigg, G. G. Jemigan, T. E. Dillon, S. L. Rommel, P. R. Berger, D. S. Simons, P. H. Chi, R. Lake, and A. C. Seabaugh, "Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy," Appl. Phys. Lett., vol. 75, pp. 1308-1310, 1999.
7. R. Duschl, O. G. Schmidt, and K. Eberl, "Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio," Appl. Phys. Lett., vol. 76, pp. 879-881, 1999.
8. U. Auer, W. Prost, M. Agethen, F.-J. Tegude, R. Duschl, and K. Eberl, "Low-voltage MOBILE logic module based on Si/SiGe interband tunneling diodes," IEEE Electron Device Lett., vol. 22, pp. 215-217, May 2001.
9. W. Zagozdzon-Wosik, P. Grabiec, and G. Lux, "Fabrication of submicron junctions - Proximity rapid thermal diffusion of phosphorus, boron, and arsenic," IEEE Trans. Electron Devices, vol. 41, pp. 2281-2290, Dec. 1994.
10. J. Wang, D. Wheeler, Y. Van, J. Zhao, S. Howard, and A. Seabaugh, "Silicon tunnel diodes formed by proximity rapid thermal diffusion," in Proc. IEEE Lester Eastman Conf. High Performance Devices, 2002, pp. 393-401.
11. A. G. Chynoweth, W. L. Feldmann, and R. A. Logan, "Excess tunnel current in silicon Esaki junctions," Phys. Rev., vol. 121, pp. 684-694, 1961.
12. V. M. Franks, K. F. Hulme, and J. R. Morgan, "An alloy process for making high current density silicon tunnel diode junctions," Solid State Electron., vol. 8, pp. 343-344, 1965.