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Applied Physics Letters

Volumn 79, Issue 21, 2001, Pages 3422-3424

Extending the epitaxial thickness limit in low-substrate-temperature-grown GaAs

(5) Apostolopoulos, G a Boukos, N a Travlos, A a Herfort, J b Ploog, K H b

a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY (Greece)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035914696 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1420783 Document Type: Article

Times cited : (3)

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