Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 503-507

  Sugiyama, Yoshihiro ^a   Nakata, Yoshiaki ^a   Muto, Shunichi ^b   Awano, Yuji ^a   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; HOLE TRAPS; PHOTOELECTRICITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SPECTROSCOPY; THERMAL EFFECTS;

HOLE BURNING SPECTROSCOPY; INDIUM ARSENIDE; SELF-ASSEMBLED QUANTUM DOTS (SAQD);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033703174     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00366-5     Document Type: Article

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