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Volumn 21, Issue 3, 2003, Pages 582-588

Effect of thermal annealing on the electronic properties of nitrogen doped amorphous carbon/p-type crystalline silicon heterojunction diodes

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CARBON; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC PROPERTIES; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0038613491     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1562477     Document Type: Article
Times cited : (6)

References (32)
  • 30
    • 0038545023 scopus 로고    scopus 로고
    • Ph.D. thesis, Leland Stanford Jr. University
    • B. C. Holloway, Ph.D. thesis, Leland Stanford Jr. University, 1997.
    • (1997)
    • Holloway, B.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.