Hydrogen sensor based on RF-sputtered thermoelectric SiGe film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 A, 2003, Pages 1563-1567

  Qiu, Fabin ^a,b   Shin, Woosuck ^a   Matsumiya, Masahiko ^a   Izu, Noriya ^a   Murayama, Norimitsu ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JILIN UNIVERSITY   (China)

Author keywords

Hydrogen sensor; SiGe; Thermoelectric effect; Thin film

Indexed keywords

ALUMINA; ANNEALING; CATALYSTS; HYDROGEN; PLATINUM; SPUTTERING; TEMPERATURE; THERMOELECTRICITY; THIN FILMS;

HYDROGEN-SENSING PROPERTIES; THERMOELECTRIC HYDROGEN SENSOR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0038608208     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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