Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films

Solid-State Electronics

Volumn 45, Issue 11, 2001, Pages 1957-1961

  Natarajan, A ^a   Bera, L K ^a   Choi, W K ^a   Osipowicz, T ^a   Seng, H L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Oxidation; Polycrystalline SiGe films; Radio frequency sputtered

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC BREAKDOWN; ELECTRON TRAPS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

POLYCRYSTALLINE THIN FILMS;

THIN FILMS;

EID: 0035501427     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00240-4     Document Type: Article

References (14)

1. A low temperature (≤550°C) silicon-germanium MOS thin film transistor technology for large area electronics
2. Kinetics and mechanism of oxidation of SiGe:dry versus wet
3. Wet oxidation of GeSi strained layers by rapid thermal processing
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5. Floating low-temperature radio-frequency plasma oxidation of polycrystalline silicon-germanium
6. Microstructure influence on the first stage of oxidation process in polycrystalline SiGe layers
7. Microstructural characterisation of r.f. sputtered polycrystalline silicon-germanium films
8. Evidence of Ge island formation during thermal annealing of SiGe alloys: Combined atomic force microscopy and Auger electron spectroscopy
9. Evolution of surface morphology and strain during SiGe epitaxy
10. 2 films obtained by plasma assisted oxidation
11. 0.16 alloy on Si (1 0 0): Implications for SiGe oxidation kinetics and oxide electrical properties
12. Electrical properties of oxides grown on strained SiGe layer at low temperatures in a microwave oxygen plasma
13. A single frequency approximation for interface-state density determination
14. Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon films