Effect of SiGe thickness on crystallisation and electrical properties of sputtered silicon film in Si/SiGe/insulator structure

Applied Surface Science

Volumn 135, Issue 1-4, 1998, Pages 143-149

  Jelenkovic, Emil V ^a   Tong, K Y ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Argon; Crystallisation; Hall mobility; Resistivity; Silicon; Silicon germanium; Sputtering

Indexed keywords

ARGON; BORON; CARRIER MOBILITY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY OF SOLIDS; MORPHOLOGY; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION;

HALL MOBILITY; SILICON GERMANIUM;

SEMICONDUCTING FILMS;

EID: 0032475374     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00268-2     Document Type: Article

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