Evaluation of pulse magnetron sputtered Ge films doped with antimony for sensors application

Sensors and Actuators, B: Chemical

Volumn 76, Issue 1-3, 2001, Pages 361-365

  Beensh Marchwicka, G M ^a   Mielcarek, W ^b   Prociow E ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b ELECTROTECHNICAL INSTITUTE   (Poland)

Author keywords

Germanium thin film; Pulse sputtering; Seebeck effect; Stress; Thermal sensor

Indexed keywords

ANTIMONY; COMPRESSIVE STRESS; MAGNETRON SPUTTERING; SEEBECK EFFECT; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; TENSILE STRESS;

PULSE SPUTTERING; THERMAL SENSORS;

SEMICONDUCTING FILMS;

EID: 0035369377     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(01)00633-5     Document Type: Conference Paper

References (11)

1. Thermal sensors based on the Seebeck effect
2. Thermoelectric infrared sensors in CMOS technology
3. Thick oxidized porous silicon layers for the design of a biomedical thermal conductivity microsensor
4. Seebeck effect in germanium
5. Thermoelectric properties of high temperature recrystallized Ge films, in metal/nonmetals microsystems: Physics, technology and applications
6. Structure and morphology of Ge(Au) sputtered films with useful Seebeck effect
7. Preparation of thermosensitive magnetron sputtered thin films
8. Adaptive controlled thermal sensor for measuring gas flow
9. Influence of discharge current on the intrinsic stress in Mo films deposited using cylindrical and planar magnetron sputtering sources