Physical compact collector-emitter breakdown model for heterojunction bipolar transistors

Solid-State Electronics

Volumn 41, Issue 11, 1997, Pages 1735-1737

  Anholt, R ^a  

^a Gateway Modeling Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS;

COLLECTOR-EMITTER BREAKDOWN;

SOLID STATE DEVICES;

EID: 0031275438     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00132-9     Document Type: Article

References (4)

1. Anholt, R., Bozada, C., DeSalvo, G., Dettmer, R., Ebel, J., Gillespie, J., Havasay, C., Ito, C., Jenkins, T., Nakano, K., Pettiford, C., Quach, T., Sewell, J. and Via, D., 1996 IEEE GaAs IC Symp., p. 167-170.
2. Kloosterman, W. J. and De Graaff, H. C., IEEE Trans. Elect. Dev., 1989, 36, pp. 1376-1380.
3. Anholt, R., Electrical and thermal characterization of MESFETs, HEMTs, and HBTs, Artech, Norwood, Mass, 1994.
4. Chen, J. J., Gao, G., Chyl, J. I., Morkoc, H., IEEE Trans. Elect. Dev., 1989, 26, pp. 2165-2172.