Submicron, fully self-aligned HBT with an emitter geometry of 0.3 μm

IEEE Electron Device Letters

Volumn 18, Issue 7, 1997, Pages 358-360

  Hafizi, Madjid ^a,b  

^a Hughes Aircraft Co   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY RESPONSE; OHMIC CONTACTS; PHOTORESISTS; PLASMA ETCHING; POLYIMIDES; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; VAPOR DEPOSITION;

SUBMICRON EMITTER GEOMETRY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031188085     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.596936     Document Type: Article

References (8)

1. C. Baringer et al., "3-bit, 8 GSPS flash ADC." in Proc. Indium Phosphide and Rel. Mater. Conf., 1996, pp. 64-67.
2. L. Tran et al., "Fully functional high-speed 4-bit A/D converters using InAlAs/InGaAs HBT's," in Tech. Dig. GaAs IC Symp., 1993, pp. 159-162.
3. K. R. Nary et al., "An 8-bit 2 GSPS A/D converter," in Tech. Dig. GaAs IC Symp., 1995, pp. 303-306.
4. W. S. Lee et al., "Submicrometer self-aligned AIGaAs/GaAs heterojunction bipolar transistor process suitable for digital applications." IEEE Trans. Electron Devices, vol. 39, pp. 2694-2700, Dec. 1992.
5. K. Nagata et al., "A new self-alignment technology using bridged base electrode for small-scaled AlGaAs/GaAs HBT's," IEEE Trans. Electron Devices, vol. 39, pp. 1786-1791, Aug. 1992.
6. Y. Matsuoka, H. Nahajima, K. Kurishima, T. Kobayashi, M. Yoneyama, and E. Sano. "Novel InP/InGaAs double-heterojunction bipolar transistors suitable for high-speed IC's and OEIC's," in Proc. InP Rel. Mater., 1994, pp. 555-558.
7. H. Masuda et al., "Novel self-aligned submicron emitter InP/InGaAs HBT's using T-shaped emitter electrode," in Proc. InP Rel. Mat., 1995, pp. 644-647.
8. max new self-alignment InP/InGaAs HBT's with a highly Be-doped base layer grown by ALE/MOCVD," IEEE Electron Device Lett., vol. 16, pp. 55-57, Feb.