Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 885-889

  Ishikawa, Fumitaro ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

AlGaN GaN; Cathodoluminescence; Depth resolved characterization; Non destructive characterization; Yellow luminescence

Indexed keywords

CATHODOLUMINESCENCE; ELECTRIC POTENTIAL; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); PASSIVATION; SURFACE STRUCTURE;

CATHODOLUMINESCENCE IN-DEPTH SPECTROSCOPY (CLIS);

HETEROJUNCTIONS;

EID: 0038548365     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00022-9     Document Type: Conference Paper

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