Preparation and properties of GaN nanostructures by post-nitridation technique

Physica B: Condensed Matter

Volumn 334, Issue 3-4, 2003, Pages 287-291

  Yang, Ying Ge ^a   Ma, Hong Lei ^a   Xue, Cheng Shan ^b   Zhuang, Hui Zhao ^b   Jin Ma, ^a   Hao, Xiao Tao ^a  

^a SHANDONG UNIVERSITY   (China)

^b SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

GaN nanostructures; Optical properties; Post nitridation

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; MOLECULAR STRUCTURE; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; TEMPERATURE MEASUREMENT;

POST-NITRIDATION;

SEMICONDUCTING FILMS;

EID: 0038519417     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(03)00078-4     Document Type: Article

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