Ga2O3 nanowires prepared by physical evaporation

Solid State Communications

Volumn 109, Issue 11, 1999, Pages 677-682

  Zhang, H Z ^a   Kong, Y C ^a   Wang, Y Z ^a   Du, X ^a   Bai, Z G ^a   Wang, J J ^a   Yu, D P ^a   Ding, Y ^a   Hang, Q L ^a   Feng, S Q ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A. Nanostructures; B. Crystal growth; C. Crystal structure and symmetry; C. Transmission electron microscopy

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL SYMMETRY; EVAPORATION; MOLECULAR STRUCTURE; NUCLEATION; OXIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM OXIDE NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0033518755     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00015-0     Document Type: Article

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