Defect luminescence of GaN grown by pulsed laser deposition

Journal of Crystal Growth

Volumn 222, Issue 3, 2001, Pages 497-502

  Mah, K W ^a   McGlynn, E ^a   Castro, J ^b   Lunney, J G ^b   Mosnier, J P ^a   O'Mahony, D ^b   Henry, M O ^a  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DEPOSITION; LUMINESCENCE; PULSED LASER APPLICATIONS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; PULSED LASER DEPOSITION (PLD);

SEMICONDUCTING FILMS;

EID: 0035157156     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00963-5     Document Type: Article

References (30)

1. Nakamura S., Mukai T., Senoh M. Appl. Phys. Lett. 64:1994;1687.
2. Rao V.M., Hong W.P., Caneau C., Chang G.K., Papanicolaou N., Dietrich H.B. J. Appl. Phys. 70:1991;3943.
3. Service R.F. Science. 276:1997;895.
4. Tang H., Webb J.B. Appl. Phys. Lett. 74:1999;2373.
5. Fischer S., Wetzel C., Hansen W.L., Bourret-Courchesns E.D. Appl. Phys. Lett. 69:1996;2716.
6. Vispute R.D., Talyansky V., Sharma R.P., Choopun S., Downes M., Venkatesan T. Appl. Phys. Lett. 71:1997;102.
7. Krtschil A., Witte H., Lisker M., Christen J. Appl. Phys. Lett. 74:1999;2032.
8. Huang T.F., Marshall A., Spruytte S., Harris J.S. Jr. J. Crystal Growth. 200:1999;362.
9. Cole D., Lunney J.G., Logue F.P., Donegan J.F., Coey J.M.D. Mater. Sci. Eng. B. 48:1997;239.
10. Middleton P.G., O'Donnell K.P., Trager-Cowan C., Cole D., Cazzanelli M. J. Lunney. Mater. Sci. Eng. B. 59:1999;133.
11. Vinegoni C., Cazzanelli M., Trivelli A., Mariotto G., Castro J., Lunney J.G. J. Levy. Surf. Coat. Tech. 124:2000;272.
12. Oktyabrsky S. Appl. Phys. Lett. 74:1999;2465.
13. M. Cazzanelli, M.Sc. Thesis, University of Dublin, Trinity College, 1998.
14. Heavens O.S. Optical Properties of Thin Solid Films. 1965;Dover, New York.
15. Kim M.H., Sone C., Yi J.H., Yoon E. Appl. Phys. Lett. 71:1997;1228.
16. Skromme B.J., Jayapalan J. Appl. Phys. Lett. 74:1999;2358.
17. Kurobe T., Sekiguchi Y., Suda J., Yoshimoto M., Matsunami H. Appl. Phys. Lett. 73:1998;2305.
18. Leroux M., Grandjean N., Beaumont B., Nataf G., Semond F., Massies J., Gibart P. J. Appl. Phys. 86:1999;3721.
19. Li G., Chua S.J., Xu S.J., Wang W. Appl. Phys. Lett. 74:1999;2821.
20. Fischer S., Steude G., Hofman D.M., Kurth F., Anders F. J. Crystal Growth. 189/190:1998;556k.
21. B.G. Gen, J.W. Orton, T.S. Cheng, D.J. Dewsnip, D.E. Lacklison, C.T. Foxon, C.H. Malloy, X. Chen, MRS Int. J. Nitride Semicond. 1 (1996) Art. No. 22.
22. Monemar B. J. Crystal Growth. 189/190:1998;1.
23. C. Wetzel, S. Fischer, W. Walukiewiez, J. Ager, E.E. Haller, I. Grzegory, S. Porowski, T. Suski, GaN and related material, Proceedings of the first International Symposium, MRS, Vol. 395, 1996, p. 417.
24. Meyer B. Mater. Res. Soc. Symp. Proc. 449:1997;497.
25. Davies G. Phys. Rep. 176:1989;83.
26. As D.J., Schmilgus F., Wang C., Schmilgus B., Wang C., Schottker B., Schikora D., Lischka K. Appl. Phys. Lett. 70:1997;1311.
27. O'Donnell K.P., Umlauf M., Kraushaar M., Kalt H., Briot O. Mater. Sci. Eng. B. 50:1997;264.
28. J.I. Pankove, GaN(1) Semiconductor and Semimetal, Vol. 1, Academic Press. Newyork (1998).
29. Okumura H., Balakrishnan K., Hamaguchi H., Koizumi T., Chichibu S., Nakanishi H., Nagatomo T., Yoshida S. J. Crystal Growth. 189/190:1998;364.
30. Daudin B., Feuillet G., Hubner J., Samson Y., Widmann F. J. Appl. Phys. 84:1998;2295.