Luminescent properties of GaN thin films prepared by pulsed laser deposition

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 137-140

  Cazzanelli, M ^a   Vinegoni, C ^b   Cole, D ^a   Lunney, J G ^a   Middleton, P G ^c   Trager Cowan, C ^c   O'Donnell, K P ^c   Pavesi, L ^b  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b UNIVERSITY OF TRENTO   (Italy)

^c UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EXCIMER LASERS; LASER ABLATION; LUMINESCENCE; MOLECULAR DYNAMICS; NITROGEN; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; SAPPHIRE; SUBSTRATES; TEMPERATURE;

CONTINUOUS WAVE BLUE LUMINESCENCE; EXCITONIC RECOMBINATION; LUMINESCENT CENTRES; LUMINESCENT PROPERTIES; RECOMBINATION DYNAMICS;

THIN FILMS;

EID: 0033528961     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00333-X     Document Type: Article

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