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Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 55-58

PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals

(6) Rasp, M a Straubinger, Th L a Schmitt, E a Bickermann, M b Reshanov, S b Sadowski, H b

a SICRYSTAL AG (Germany)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

6H SiC; Aluminium; Bulk Growth; Doping; P Type SIC; PVT Growth; Resistivity; Semi Insulating; Vanadium

Indexed keywords

CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; PHOTOLUMINESCENCE;

INTRINSIC DEFECTS;

SILICON CARBIDE;

EID: 0038386919 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.55 Document Type: Conference Paper

Times cited : (12)

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