Surface control of 4H-SiC MESFETs

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1387-1390

  Hilton, K P ^a   Uren, M J ^a   Hayes, D G ^a   Johnson, H K ^a   Wilding, P J ^a  

^a QINETIQ   (United Kingdom)

Author keywords

High temperature; Instabilities; MESFETs; Passivation; Recess etch; Surface control

Indexed keywords

MESFET DEVICES; PASSIVATION; STABILITY; ELECTRIC CURRENTS; OXIDES; SILICON CARBIDE;

CURRENT INSTABILITY; GATE RECESS; HIGH TEMPERATURE; MESFETS; PROCESS FLOWS; SURFACE CONTROLS; SURFACE PASSIVATION; THERMALLY GROWN OXIDE; CURRENT INSTABILITIES;

SILICON CARBIDE; MESFET DEVICES;

EID: 0036435421     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1387     Document Type: Conference Paper

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