Resistivity mapping of semi-insulating 6H-SiC wafers

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 135-138

  Roth, M D ^a   Heydemann, V D ^a   Mitchel, W C ^b   Yushin, N K ^a   Sharma, M ^a   Wang, S ^a   Balkas, C M ^a  

^a Sterling Semiconductor Inc   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

6H SiC; Activation energy; Hall effect; Mapping; Resistivity; Semi insulating; Uniformity

Indexed keywords

ACTIVATION ENERGY; CORRELATION METHODS; ELECTRIC CONDUCTIVITY; HALL EFFECT; SILICON CARBIDE; THERMAL EFFECTS; INSULATION; MAPPING; SILICON WAFERS;

RESISTIVITY MAPPING; SEMI-INSULATING; SPATIAL DISTRIBUTIONS; UNIFORMITY; 6H-SIC; HALL EFFECT MEASUREMENT; RESISTIVITY MEASUREMENT; ROOM-TEMPERATURE RESISTIVITY; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT MEASUREMENTS;

SILICON WAFERS; SILICON CARBIDE;

EID: 0242606608     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.135     Document Type: Article

References (8)

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