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Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1363-1366

Influence of semi-insulating substrate purity on the output characteristics of 4H-SiC MESFETs

(6) Sghaier, N a Bluet, J M a Souifi, A a Guillot, G a Morvan, E b Brylinski, C b

a INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

b Thales LCR (France)

Author keywords

HTCVD; MESFETs; Trapping

Indexed keywords

ACTIVATION ENERGY; MESFET DEVICES; SILICON CARBIDE; ELECTRIC CONDUCTANCE; FREQUENCIES; SUBSTRATES;

ELECTRICAL CHARACTERISTIC; FREQUENCY DISPERSION; HTCVD; MESFETS; OUTPUT CHARACTERISTICS; PHYSICAL VAPOR TRANSPORT; SEMI-INSULATING SUBSTRATE; TRAPPING; SEMI-INSULATING SUBSTRATES;

SUBSTRATES; MESFET DEVICES;

EID: 0036433926 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.389-393.1363 Document Type: Conference Paper

Times cited : (11)

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