Electrical and optical isolation of GaN by high energy ion irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 207, Issue 3, 2003, Pages 308-313

  Senthil Kumar, M ^a   Sonia, G ^a   Kanjilal, D ^b   Dhanasekaran, R ^a   Kumar, J ^a  

^a ANNA UNIVERSITY   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

DLTS; GaN; HALL effect; High energy irradiation; PL

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; IONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ION IRRADIATION;

GALLIUM NITRIDE;

EID: 0038378987     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00966-2     Document Type: Article

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