Evaluation of 0.3 μm poly-silicon CMOS circuits for intelligent power IC application

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1103-1106

  Matsudai, Tomoko ^a   Terauchi, Mamoru ^a   Yoshimi, Makoto ^a   Yasuhara, Norio ^a   Ushiku, Yukihiro ^a   Nakagawa, Akio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Amorphous silicon; CMOS; Delay time; Fine device; NAND ring; Polysilicon; Power IC; Recrystallization

Indexed keywords

EID: 0038265449     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1103     Document Type: Review

References (4)

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