High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology

Annual Device Research Conference Digest

Volumn , Issue , 2001, Pages 189-190

  Makihira, K ^a   Yoshii, M ^a   Asano, T ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CARRIER MOBILITY; CRYSTALLIZATION; FILM GROWTH; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; ION IMPLANTATION; NUCLEATION; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

METAL IMPRINT TECHNOLOGY; SOLID PHASE CRYSTALLIZATION (SPC);

THIN FILM TRANSISTORS;

EID: 0034875658     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)