Method for measuring deep levels in thin silicon-on-insulator layer without any interface effects

Journal of the Electrochemical Society

Volumn 145, Issue 10, 1998, Pages 3581-3585

  Kang, S ^a   Ahn, C G ^a   Kang, B K ^a,c   Kwon, Y K ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Uiduk University   (South Korea)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CRYSTAL DEFECTS; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); ION IMPLANTATION; OHMIC CONTACTS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

CHARGE COUPLING PROBLEM; DEEP LEVELS; SCHOTTKY CONTACT; SURFACE TRAPS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 0032186647     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838845     Document Type: Article

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