Contactless characterization of surface and interface band-bending in Silicon-on-insulator (SOI) structures

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 182-185

  Okumura, T ^a   En, A ^a   Eguchi, K ^a   Suhara, M ^a  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

Contactless characterization; Contactless I V method; Kelvin probe; Silicon on insulator; SOI; SPV; Surface photovoltage

Indexed keywords

CAPACITANCE; INFRARED RADIATION; INTERFACES (MATERIALS); LIGHT SOURCES; SUBSTRATES;

SURFACE-PHOTOVOLTAGE (SPV);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0037197518     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00988-6     Document Type: Conference Paper

References (13)

1. Properties of silicon