Contactless method for electrical characterization of silicon-on-insulator materials

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 A, 2001, Pages 5217-5220

  Okumura, T ^a   Eguchi, K ^a   En, A ^a   Suhara, M ^a  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

Contactless characterization; Contactless I V method; Kelvin probe; Silicon on insulator; SOI; SPV; Surface photovoltage

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; VOLTAGE MEASUREMENT;

CONTACTLESS CHARACTERIZATION; KELVIN-PROBE METHOD; SURFACE PHOTOVOLTAGE MEASUREMENT;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035456774     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5217     Document Type: Article

References (15)