Kinetic Monte Carlo model of silicon CVD growth from a mixed H2/SiH4 gas source

Materials Research Society Symposium - Proceedings

Volumn 584, Issue , 2000, Pages 257-261

  Fearn, M ^a   Sayed, M ^a   Jefferson, J H ^a   Robbins, D J ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; COMPUTATIONAL FLUID DYNAMICS; COMPUTER SIMULATION; DESORPTION; HYDROGEN; MONTE CARLO METHODS; PARTIAL PRESSURE; SILANES; TEMPERATURE;

HYDROGEN DESORPTION RATES; HYDROGEN PARTIAL PRESSURE; KINETIC MONTE CARLO MODEL; SILICON GROWTH RATE;

SILICON;

EID: 0033693781     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/PROC-584-257     Document Type: Article

References (0)