Simple model for the growth of polycrystalline Si using the kinetic Monte Carlo simulation

Modelling and Simulation in Materials Science and Engineering

Volumn 8, Issue 5, 2000, Pages 751-762

  Levine, Steven W ^a   Clancy, Paulette ^b  

^a EXXONMOBIL UPSTREAM RESEARCH COMPANY   (United States)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; FILM GROWTH; MATHEMATICAL MODELS; MONTE CARLO METHODS; MORPHOLOGY; SILICON; TEMPERATURE;

ATOMIC SCALE SIMULATION; THIN FILM DEPOSITION;

POLYCRYSTALLINE MATERIALS;

EID: 0034273691     PISSN: 09650393     EISSN: None     Source Type: Journal    
DOI: 10.1088/0965-0393/8/5/308     Document Type: Article

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