Traps in GaAs detectors (before and after irradiation) and electric field redistribution in excited SI-GaAs

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 395, Issue 1, 1997, Pages 94-97

  Vaitkus, J ^a   Storasta, J ^a   Kiliulis, R ^a   Rinkevicius, V ^a   Slenys, S ^a   Smetona, S ^b   Meskinis, S ^b   Smith, K M ^c   O'Shea, V ^c  

^a VILNIUS UNIVERSITY   (Lithuania)

^b KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD EFFECTS; HALL EFFECT; HEAT TREATMENT; MAGNETOOPTICAL EFFECTS; NONLINEAR OPTICS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRIC FIELD REDISTRIBUTION; ELECTRON/HOLE TRAPS;

RADIATION DETECTORS;

EID: 0031209437     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00619-0     Document Type: Article

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